In linear scale, we have a quadratic dependence In log-scale, we have an exponential dependenceġ5 ( ) I = I e - e ( ) ( ) d n Dn = dx No recombination Dn = Ax + B l dnĢ n No recombination Dn = Dn = Ax + B dx 2 dn d D n 2 = D + G - R dt n dx 2 l y varies as kVG dn n - n (qDn / l) (e-(Y - Vs)/UT - e-(Y - Vd)/UT) J = qD = qD source drain = n dx n l ( ) ( ) ( ) k V - V / u k V - V / u I = I e - g S T e g d T Use subthreshold operation as the fundamental case Sub-VT operation simplifies this 2D problem to 2 1D problems Allows intuition across sub-VT and above-VT operationġ0 Channel Current Dependence on Gate Voltage (n-well) CMOS Process = nFETs and pFETs are available all p-n junction must be reversed bias We create a silicon-oxide “stencil” (or mask) We get highly repeatable gates because the gate acts as a stencil as well N-type ND P-type NA First-Principles Modelĥ A MOSFET Transistor Source Drain Gate Drain Gate Source SubstrateĦ Self-Aligned Process How do we make a basic transistor element? Suitable candidate for X-band application.Ec qDV Ec E0 Ec Ef Case I: P(E) ~ exp( - E0 /kT) Case II: P(E) ~ exp( - ( E0 - qDV)/kT) Ratio of Case II to Case I = 1 P(E) = ~ e-(E-Ef)/kT 1 + e-(E-Ef)/kT exp( DV / UT ) UT = kT/qģ P-N Junctions Depletion Layer or Region N-type ND P-type NA qND Charge VBR product of 3.375 THz.V has been calculated which isĬomparable with state-of-art GaN HEMT. Mentioned here is the highest for Ga2O3 and the first demonstration of 100 GHz
Gain cut off frequency (fT) and 100 GHz fMAX for 20 V drain bias. Breakdown voltageĪround 125 V was reported for LGD= 1.2 micrometer. Showing no current collapse without any external passivation. Observed no current collapse for both drain and gate lag measurement even at Transconductance is limited by higher channel sheet resistance (Rsheet). Was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. On current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular BeamĮpitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal
MOSFET with no current collapse and record power gain cut off frequency (fMAX). Download a PDF of the paper titled Sub-100 nm -Ga2O3 MOSFET with 100 GHz fMAX and >100 V breakdown, by Chinmoy Nath Saha and 5 other authors Download PDF Abstract: This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate
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